abs2 ... ABS10 abs2 ... ABS10 surface mount si-bridge-rectifiers with 4mm pitch si-brckeng leichrichter fr die oberfl?chenmontage mit 4mm raster version 2013-01-21 dimensions - ma?e [mm] nominal current C nennstrom 0.8 a alternating input voltage eingangswechselspannung 140...700 v plastic case kunststoffgeh?use abs weight approx. gewicht ca. 0.1 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert standard packaging taped and reeled green molding standard lieferform gegurtet auf rolle halogen-free maximum ratings and characteristics type typ max. altern. input voltage max. eingangswechselspg. rep. peak reverse voltage periodische spitzensperrspg. v vrms [v] v rrm [v] 1 ) abs2 140 200 abs4 280 400 abs6 420 600 abs8 560 800 ABS10 700 1000 repetitive peak forward current periodischer spitzenstrom f > 15 hz i frm 5.4 a 2 ) peak forward surge current, 50/60 hz half sine-wave sto?strom fr eine 50/60 hz sinus-halbwelle t a = 25c i fsm 27/30 a rating for fusing, t < 10 ms grenzlastintegral, t < 10 ms t a = 25c i 2 t 3.6 a 2 s operating junction temperature C sperrschichttemperatur storage temperature C lagerungstemperatur t j t s -50...+150c -50...+150c 1 valid per diode C gltig pro diode 2 max. temperature of the terminals t t = 100c C max. temperatur der anschlsse t t = 100c ? diotec semiconductor ag http://www.diotec.com/ 1 6.2 +0.2 1 . 4 0 . 1 0.6 0.1 4.0 0.2 4 . 4 0 . 2 5.0 0.2 + ~ ~ 0.2 0.1 1 . 5 0 . 1 type typ
abs2 ... ABS10 characteristics kennwerte max. average forward rectified current dauergrenzstrom t a = 40c i fav i fav 0.8 a 1 ) 1 a 2 ) forward voltage C durchlass-spannung t j = 25c i f = 0.4 a i f = 0.8 a v f v f < 0.95 v 3 ) < 1.1 v 3 ) leakage current C sperrstrom t j = 25c v r = v rrm i r < 5 a thermal resistance junction to ambient air w?rme widerstand sperrschicht C umgebende luft r tha r tha < 80 k/w 1 ) < 62 k/w 2 ) thermal resistance junction to terminal w?rme widerstand sperrschicht C anschluss r tht < 25 k/w 1 mounted on p.c. board with 25 mm 2 copper pads at each terminal montage auf leiterplatte mit 25 mm 2 kupferbelag (l?tpad) an jedem anschluss 2 mounted on alumina substrate 2500mm2 with 1 mm 2 copper pads at each terminal montage auf aluminium-substrat 2500mm2 mit 1 mm 2 kupferbelag (l?tpad) an jedem anschluss 3 valid per diode C gltig pro diode 2 http://www.diotec.com/ ? diotec semiconductor ag 10 10 1 10 10 2 -1 -2 [a] i f forward characteristics (typical values) durchlasskennlinien (typische werte) 0 .4 v 0 .8 1 .0 1 .2 1 .4 [v] 1 .8 f t = 25c j 30a-(0.4a-0.95v) rated forward current versus ambient temperature zul. richtstrom in abh. von der umgebungstemp. i fav [%] 120 100 80 60 40 20 0 [c] t a 150 100 50 0
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